IGBT Device Lifetime Prediction of Rail Transit Based on Semi-physical Simulation

Abstract

Insulated Gate Bipolar Transistor (IGBT) used in rail transit work in complex environments such as high voltage/high current/high frequency switching status for a long time. Frequent fluctuations in power consumption and junction temperature of IGBTs can cause fatigue aging of the devices. Therefore, the life prediction technology of IGBT devices is crucial. Therefore, IGBT device lifetime prediction plays an important role in Railway System Health Monitoring. In this paper, a semiphysical simulation platform is introduced to simulate locomotive operation circumstance, then IGBT junction temperature can be calculated by MATLAB according to mission profile. Ultimately, IGBT device lifetime prediction is completed through rain flow algorithm and life model.