Analysis and Majorization of Rail Transit Vehicle IGBT Device Lifetime Prediction Algorithm

Abstract

Insulated Gate Bipolar Transistor (IGBT), as the key device of rail transit vehicle, plays an important role in Health Monitoring of Rail Transit Structure. But how to make an accurate prediction to the device lifetime is still a technical problem. Over the years, researchers have proposed many algorithms, such as ABB’ look-up table method [1], Infineon’ cycle curve factor correction method etc [2]. Based on operation curve simulated by semi-physical simulation platform and MATLAB with Plecs joint simulation platform, this paper proposes a lifetime prediction algorithm comparing the lifetime prediction algorithms of Mitsubishi, Infineon and ABB. During the calculation of lifetime prediction, rainflow algorithm is optimized for extract the temperature load changes and quadratic fitting method is utilized to obtain life prediction model parameters.