Development of the 1700V Hybrid SiC Modules.

Abstract

IGBT has the characteristics of high output power and high switching frequency, which has become the best choice for high voltage and high power switches. As a single carrier device, The sic JBS has high switching frequency due to its no reverse recovery characteristics. In this paper, a hybrid sic module with SiC JBS instead of Si diode in IGBT module is proposed. By comparing the test results, it is found that the hybrid module has obvious advantages in diode switching loss and IGBT turn-on curve. Compared with the traditional pure Si module, the switching speed of the hybrid module can be faster. When the hybrid module is turned on, there is no current spike and voltage spike when the diode is turned off, so the reliability of the hybrid module is improved. By calculation, the total power loss of the hybrid module on the diode is only 38.3% of that of the traditional module under the same operating conditions, which means that the hybrid module is more energy efficient and generate less thermal