Analysis on the Influence of IGBT Dead Time Setting

BO WANG, YONG TANG

Abstract


The dead time setting of Insulated Gate Bipolar Transistor (IGBT) is usually determined by the calculation formula in Infenion technical documents. The parameters in the calculation formula are often obtained according to manual or empirical values, without considering actual application conditions, which inevitably leads to unreasonable setting. In this paper, several main factors affecting the dead time setting are analyzed. Based on the working principle of semiconductor devices, the influence laws of bus voltage, current and temperature on IGBT dead time setting are analyzed, and then the design experiment is carried out to verify.

Keywords


IGBT, Dead time setting, Bus voltage, Current, TemperatureText


DOI
10.12783/dteees/peems2019/33975

Full Text:

PDF

Refbacks

  • There are currently no refbacks.