Simulation of the Energy Efficiency Dependence on Threshold Voltage in the CMOS Inverter

ALEKSEI ARSENTEV, EKATERINA PLOTNIKOVA, MAXIM HARCHENKO

Abstract


In this work, we show the CMOS inverter sensitivity of the threshold voltage on the channel doping in dynamic mode. Simulated transient response of the inverter determines the propagation delays for the high-low and low-high transitions. Current emissions at the time of switching were reduced by optimizing the channel impurities. According to the simulation results, it is possible to estimate the efficiency of energy saving depending on the threshold voltages of NMOS and PMOS transistors in the CMOS inverter.

Keywords


CMOS; Inverter; Channel Doping; Threshold Voltage; Leakage Current; EfficiencyText


DOI
10.12783/dteees/tpcase2018/30385

Full Text:

PDF

Refbacks

  • There are currently no refbacks.